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K13A25D

Toshiba Semiconductor

TK13A25D

Description
MOSFETs Silicon N-Channel MOS (π-MOS) TK13A25D 1. Applications Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.19 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK13A25D TO-220SIS 1: Gate (G) 2:...


Toshiba Semiconductor

K13A25D

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