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K1398 Datasheet

Part Number K1398
Manufacturers NEC
Logo NEC
Description 2SK1398
Datasheet K1398 DatasheetK1398 Datasheet (PDF)

  K1398   K1398
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1398 N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING 5 DESCRIPTION The 2SK1398 is N-channel MOS Field Effect Transistor designed for a high-speed switching device in digital circuits. The 2SK1398 is driven by a 2.5-V power source, it is suitable for applications including headphone stereos which need power saving. ORDERING INFORMATION PART NUMBER PACKAGE 2SK1398 SST FEATURES • Directly driven by ICs having a 3-V power supply. • Not necessary to consider driving current because of its high input impedance. • Possible to reduce the number of parts by omitting the bias resistor. • Can be used complementary with the 2SJ184. ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS= 0 V) VDSS Gate to Source Voltage (VDS= 0 V) VGSS Drain Current (DC) Drain Current (pulse) Note ID(DC) ID(pulse) Total Power Dissipation PT Channel Temperature Tch Storage Temperature Tstg Note PW ≤ 10 ms, Duty cycle ≤ 50 % 50 ±7.0 ±100 ±200 250 1.






Part Number K1395
Manufacturers ETC
Logo ETC
Description 2SK1395
Datasheet K1398 DatasheetK1395 Datasheet (PDF)

  K1398   K1398
Free Datasheet http://www.datasheet4u.com/ Free Datasheet http://www.datasheet4u.com/ .






2SK1398

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1398 N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING 5 DESCRIPTION The 2SK1398 is N-channel MOS Field Effect Transistor designed for a high-speed switching device in digital circuits. The 2SK1398 is driven by a 2.5-V power source, it is suitable for applications including headphone stereos which need power saving. ORDERING INFORMATION PART NUMBER PACKAGE 2SK1398 SST FEATURES • Directly driven by ICs having a 3-V power supply. • Not necessary to consider driving current because of its high input impedance. • Possible to reduce the number of parts by omitting the bias resistor. • Can be used complementary with the 2SJ184. ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS= 0 V) VDSS Gate to Source Voltage (VDS= 0 V) VGSS Drain Current (DC) Drain Current (pulse) Note ID(DC) ID(pulse) Total Power Dissipation PT Channel Temperature Tch Storage Temperature Tstg Note PW ≤ 10 ms, Duty cycle ≤ 50 % 50 ±7.0 ±100 ±200 250 150 –55 to +150 V V mA mA mW °C °C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14772EJ2V0DS00 (2nd edition) (Previous No. TC-2342) Date Published March 2000 NS CP(K) Printed in Japan The mark 5 shows major revised points. © 1991, 2000 ELECT.



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