K1328 Datasheet
Part Number |
K1328 |
Manufacturers |
Hitachi Semiconductor |
Logo |
|
Description |
2SK1328 |
Datasheet |
K1328 Datasheet (PDF) |
2SK1328, 2SK1329
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter
Outline
TO-3PFM
D G
1
2
3
S
1. Gate 2. Drain 3. Source
2SK1328, 2SK1329
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage 2SK1328 2SK1329 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Symbol VDSS
Ratings 450 500 ±30 12 48 12 60 150 –55 to +150
Unit V
V A A A W °C °C
2
2SK1328, 2SK1329
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Symbol Min 2SK1328 V(BR)DSS 2SK1329 V(BR)GSS I GSS 450 500 ±30 — — — — — — ±10 250 V µA µA I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 360 V, VGS = .
Part Number |
K1329 |
Manufacturers |
Hitachi Semiconductor |
Logo |
|
Description |
2SK1329 |
Datasheet |
K1329 Datasheet (PDF) |
2SK1328, 2SK1329
Silicon N-Channel MOS FET
Application
www.DataSheet4U.com
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter
Outline
TO-3PFM
D G
1
2
3
S
1. Gate 2. Drain 3. Source
2SK1328, 2SK1329
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage 2SK1328 2SK1329 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature
www.DataSheet4U.com
Symbol VDSS
Ratings 450 500 ±30 12
Unit V
VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
V A A A W °C.
2SK1328
2SK1328, 2SK1329
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter
Outline
TO-3PFM
D G
1
2
3
S
1. Gate 2. Drain 3. Source
2SK1328, 2SK1329
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage 2SK1328 2SK1329 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Symbol VDSS
Ratings 450 500 ±30 12 48 12 60 150 –55 to +150
Unit V
V A A A W °C °C
2
2SK1328, 2SK1329
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Symbol Min 2SK1328 V(BR)DSS 2SK1329 V(BR)GSS I GSS 450 500 ±30 — — — — — — ±10 250 V µA µA I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 VGS(off) 2.0 — — |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 6.0 — — — — — — — — — — 0.40 0.45 10 1450 410 55 20 70 120 60 1.0 450 3.0 0.55 0.60 — — — — — — — — — — S pF pF pF ns ns ns ns V ns I F = 12 A, VGS = 0 I F = 12 A, VGS = 0, diF/dt = 100 A/µs I D = 6 A, VGS = 10 V, RL = 5 Ω I D = 6 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz V Ω I D = 1 mA, VDS = 10 V I D = 6 A, VGS = 10 V *1 Typ — Max — Unit V Test conditions I D = 10 mA, VGS = 0
Gate to source brea.
2014-09-01 : C3127 C3773 C5177 IXGA90N33TC IXGQ90N33TC IXGQ90N33TCD1 D1192 K641 D1829 D1490