K1317 Datasheet
Part Number |
K1317 |
Manufacturers |
Renesas |
Logo |
|
Description |
Silicon N-Channel MOSFET |
Datasheet |
K1317 Datasheet (PDF) |
2SK1317
Silicon N Channel MOS FET
Application
High speed power switching
Features
• High breakdown voltage VDSS = 1500 V • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
1 2 3
G
REJ03G0929-0200 (Previous: ADE-208-1268)
Rev.2.00 Sep 07, 2005
D 1. Gate 2. Drain (Flange) 3. Source
S
Rev.2.00 Sep 07, 2005 page 1 of 6
2SK1317
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
Electrical Characteristics
Symbol VDSS VGSS ID
ID(pulse)*1 IDR
Pch*2 Tch
Tstg
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to sour.
Part Number |
K1317 |
Manufacturers |
Hitachi Semiconductor |
Logo |
|
Description |
2SK1317 |
Datasheet |
K1317 Datasheet (PDF) |
2SK1317
Silicon N-Channel MOS FET
Application
www.DataSheet4U.com
High speed power switching
Features
• • • • • High breakdown voltage V DSS = 1500 V High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver
Outline
TO-3P
D
G
1 2 3 1. Gate 2. Drain (Flange) 3. Source
S
2SK1317
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
www.DataSheet4U.com 2. Value at TC = 25°C
Symbol VDSS VGSS ID I D(pulse)* I DR.
Silicon N-Channel MOSFET
2SK1317
Silicon N Channel MOS FET
Application
High speed power switching
Features
• High breakdown voltage VDSS = 1500 V • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
1 2 3
G
REJ03G0929-0200 (Previous: ADE-208-1268)
Rev.2.00 Sep 07, 2005
D 1. Gate 2. Drain (Flange) 3. Source
S
Rev.2.00 Sep 07, 2005 page 1 of 6
2SK1317
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
Electrical Characteristics
Symbol VDSS VGSS ID
ID(pulse)*1 IDR
Pch*2 Tch
Tstg
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to sour.
2018-12-16 : AT24C02N CY7C1006D CY7C106D HGK3FF223 HGK3FF682 HGK3FF103 HGK3FF472 HGK3FF392 HGK3FF222 HGK3FF332