K1315 Datasheet
Part Number |
K1315 |
Manufacturers |
Hitachi Semiconductor |
Logo |
|
Description |
2SK1316 |
Datasheet |
K1315 Datasheet (PDF) |
2SK1315(L)(S), 2SK1316(L)(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver
Outline
LDPAK
4
4
123 D
12 3
G S
1. Gate 2. Drain 3. Source 4. Drain
2SK1315(L)(S), 2SK1316(L)(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
2SK1315
2SK1316
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C
Symbol VDSS
VGSS ID I *1
D(pulse)
I DR Pch*2 Tch Tstg
Ratings 450 500 ±30 8 32 8 60 150 –55 to +150
Unit V
V A A A W °C °C
2
2SK1315(L)(S), 2SK1316(L)(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage
2SK1315 V(BR)DSS 2SK1316
450 500
Gate to source breakdown voltage.
Part Number |
K1317 |
Manufacturers |
Renesas |
Logo |
|
Description |
Silicon N-Channel MOSFET |
Datasheet |
K1317 Datasheet (PDF) |
2SK1317
Silicon N Channel MOS FET
Application
High speed power switching
Features
• High breakdown voltage VDSS = 1500 V • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
1 2 3
G
REJ03G0929-0200 (Previous: ADE-208-1268)
Rev.2.00 Sep 07, 2005
D 1. Gate 2. Drain (Flange) 3. Source
S
Rev.2.00 Sep 07, 2005 page 1 of 6
2SK1317
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes.
Part Number |
K1317 |
Manufacturers |
Hitachi Semiconductor |
Logo |
|
Description |
2SK1317 |
Datasheet |
K1317 Datasheet (PDF) |
2SK1317
Silicon N-Channel MOS FET
Application
www.DataSheet4U.com
High speed power switching
Features
• • • • • High breakdown voltage V DSS = 1500 V High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver
Outline
TO-3P
D
G
1 2 3 1. Gate 2. Drain (Flange) 3. Source
S
2SK1317
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
www.DataSheet4U.com 2. Value at TC = 25°C
Symbol VDSS VGSS ID I D(pulse)* I DR.
Part Number |
K1316 |
Manufacturers |
Hitachi Semiconductor |
Logo |
|
Description |
2SK1316 |
Datasheet |
K1316 Datasheet (PDF) |
2SK1315(L)(S), 2SK1316(L)(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver
Outline
LDPAK
4
4
123 D
12 3
G S
1. Gate 2. Drain 3. Source 4. Drain
2SK1315(L)(S), 2SK1316(L)(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
2SK1315
2SK1316
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C
Symbol VDSS
VGSS ID.
Part Number |
K1310A |
Manufacturers |
Toshiba Semiconductor |
Logo |
|
Description |
N-Channel MOSFET |
Datasheet |
K1310A Datasheet (PDF) |
2SK1310A
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
2SK1310A
RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER
z Output Power
: Po ≥ 190 W (Min.)
z Drain Efficiency
: ηD = 65% (Typ.)
z Frequency
: f = 230 MHz
z Push−Pull Structure Package
Unit in mm
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Drain-Source Voltage Gate-Source Voltage Drain Current Reverse Drain Current Drain Power Dissipation Channel Temperature Storage Temperature Range
VDSS VGSS
ID IDR PD Tch Tstg
100 ±20 12 12 250 150 −55~150
V V A A W °C °C
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
—
temperature/current/voltage and the si.
2SK1316
2SK1315(L)(S), 2SK1316(L)(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver
Outline
LDPAK
4
4
123 D
12 3
G S
1. Gate 2. Drain 3. Source 4. Drain
2SK1315(L)(S), 2SK1316(L)(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
2SK1315
2SK1316
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C
Symbol VDSS
VGSS ID I *1
D(pulse)
I DR Pch*2 Tch Tstg
Ratings 450 500 ±30 8 32 8 60 150 –55 to +150
Unit V
V A A A W °C °C
2
2SK1315(L)(S), 2SK1316(L)(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage
2SK1315 V(BR)DSS 2SK1316
450 500
Gate to source breakdown voltage
V(BR)GSS ±30
Gate to source leak current
I GSS
Zero gate voltage 2SK1315 IDSS
drain current
2SK1316
— —
Gate to source cutoff voltage VGS(off) Static Drain to source 2SK1315 RDS(on) on state resistance 2SK1316
2.0 — —
Forward transfer admittance |yfs|
4.5
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage
t d(on) tr t d(off) tf VDF
— — — — —
Body.
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