K1310A Datasheet
Part Number |
K1310A |
Manufacturers |
Toshiba Semiconductor |
Logo |
|
Description |
N-Channel MOSFET |
Datasheet |
K1310A Datasheet (PDF) |
2SK1310A
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
2SK1310A
RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER
z Output Power
: Po ≥ 190 W (Min.)
z Drain Efficiency
: ηD = 65% (Typ.)
z Frequency
: f = 230 MHz
z Push−Pull Structure Package
Unit in mm
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Drain-Source Voltage Gate-Source Voltage Drain Current Reverse Drain Current Drain Power Dissipation Channel Temperature Storage Temperature Range
VDSS VGSS
ID IDR PD Tch Tstg
100 ±20 12 12 250 150 −55~150
V V A A W °C °C
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
—
temperature/current/voltage and the significant change in
EIAJ
—
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2−22C2A
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
Weight: 17.5 g
ratings.
Please design the app.
N-Channel MOSFET
2SK1310A
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
2SK1310A
RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER
z Output Power
: Po ≥ 190 W (Min.)
z Drain Efficiency
: ηD = 65% (Typ.)
z Frequency
: f = 230 MHz
z Push−Pull Structure Package
Unit in mm
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Drain-Source Voltage Gate-Source Voltage Drain Current Reverse Drain Current Drain Power Dissipation Channel Temperature Storage Temperature Range
VDSS VGSS
ID IDR PD Tch Tstg
100 ±20 12 12 250 150 −55~150
V V A A W °C °C
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
—
temperature/current/voltage and the significant change in
EIAJ
—
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2−22C2A
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
Weight: 17.5 g
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2007-11-01
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Output Power Drain Efficiency Drain-Source Breakdown Voltage Drain Cut-off Current Gate Threshold Voltage Drain-Source ON Resistance Drain-Source ON Voltage Forward Tra.
2015-05-29 : K1061 K1442 K1447 K1443 K1451 K1448 A8240 A8113 A8230A A8280