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K1305 Datasheet

Part Number K1305
Manufacturers Renesas
Logo Renesas
Description Silicon N-Channel MOSFET
Datasheet K1305 DatasheetK1305 Datasheet (PDF)

  K1305   K1305
2SK1305 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D G 12 3 S REJ03G0924-0200 (Previous: ADE-208-1263) Rev.2.00 Sep 07, 2005 1. Gate 2. Drain 3. Source Rev.2.00 Sep 07, 2005 page 1 of 6 2SK1305 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Electrical Characteristics Symbol VDSS VGSS ID ID(pulse)*1 IDR Pch*2 Tch Tstg Item Symbol Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to .






Part Number K1305
Manufacturers Hitachi
Logo Hitachi
Description 2SK1305
Datasheet K1305 DatasheetK1305 Datasheet (PDF)

  K1305   K1305
2SK1305 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220FM D 12 3 1. Gate G 2. Drain 3. Source S 2SK1305 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I *1 D(pulse) I DR Pch*2 Tch Tstg Ratings 100 ±20 .






Silicon N-Channel MOSFET

2SK1305 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D G 12 3 S REJ03G0924-0200 (Previous: ADE-208-1263) Rev.2.00 Sep 07, 2005 1. Gate 2. Drain 3. Source Rev.2.00 Sep 07, 2005 page 1 of 6 2SK1305 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Electrical Characteristics Symbol VDSS VGSS ID ID(pulse)*1 IDR Pch*2 Tch Tstg Item Symbol Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Forward transfer admittance Input capacitance |yfs| Ciss Output capacitance Coss Reverse transfer capacitance Crss Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time td(on) tr td(off) tf VDF trr Note: 3. Pulse test Min 100 ±20 — — 1.0 — — 4.5 — — — — — — — — — Typ — — — — — 0.20 0.25 7.0 525.



2016-06-17 : K1305    2SK1305    K1305    TC9320F    TC9325F    TC9321F-009    TC9324F    TC9328AF    TC9327BFG    TC9329AFCG   


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