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K11A65D
TK11A65D
Description
MOSFET
s Silicon N-Channel MOS (π-MOS) TK11A65D 1. Applications Switching
Voltage
Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.54 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 7.5 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 650 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packagin...
Toshiba Semiconductor
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