K1169

www.DataSheet4U.com 2SK1169, 2SK1170 Silicon N Channel MOS FET REJ03G0916-0200 (Previous: ADE-208-1254) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D G 1. Gate 2. Drain (Flange) 3. Source 1 2 S 3 Rev.2.00 Sep 07, 2005 page 1 of 6 2SK1169, 2SK1170 www.DataSheet4U.com Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C 2SK1169 2SK1170 VGSS ID ID(pulse)* IDR 2 Pch* Tch Tstg 1 Symbol VDSS Ratings 450 500 ±30 20 80 20 120 150 –55 to +150 Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage 2SK1169 2SK1170 Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 450 500 ±30 — — 2.0 — — 10 — — — — — — — — — Typ — — — — — 0.20 0.22 16 2800 780 90 32 115 200 90 1.0 500 Max — — ±10 250 3.0 0.25 0.27 — — — — — — — — — — Unit V V µA µA V Ω S pF pF pF ns ns ns ns V ns Test conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 ID = 1 mA, VDS = 10 V 3 ID = 10 A, ...