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K10A60W Datasheet

Part Number K10A60W
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Datasheet K10A60W DatasheetK10A60W Datasheet (PDF)

MOSFETs Silicon N-Channel MOS (DTMOS) TK10A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK10A60W 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rat.

  K10A60W   K10A60W






Part Number K10A60DR
Manufacturers Toshiba
Logo Toshiba
Description N-Channel MOSFET
Datasheet K10A60W DatasheetK10A60DR Datasheet (PDF)

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  K10A60W   K10A60W







Part Number K10A60D
Manufacturers Toshiba
Logo Toshiba
Description N-Channel MOSFET
Datasheet K10A60W DatasheetK10A60D Datasheet (PDF)

TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK10A60D Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.62Ω (typ.) • High forward transfer admittance: |Yfs| = 6.0S (typ.) • Low leakage current: IDSS = 10 μA (VDS = 600 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-sourc.

  K10A60W   K10A60W







Silicon N-Channel MOSFET

MOSFETs Silicon N-Channel MOS (DTMOS) TK10A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK10A60W 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Reverse drain current (DC) Reverse drain current (pulsed) Channel temperature Storage temperature Isolation voltage (RMS) Mounting torque (Tc = 25) (t = 1.0 s) (Note 1) (Note 1) (Note 2) (Note 1) (Note 1) VDSS VGSS ID IDP PD EAS IAR IDR IDRP Tch Tstg VISO(RMS) TOR 600 ±30 9.7 38.8 30 134 2.5 9.7 38.8 150 -55 to 150 2000 0.6 V A W mJ A  V Nm Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concep.


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