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K1062 Datasheet

Part Number K1062
Manufacturers Toshiba
Logo Toshiba
Description 2SK1062
Datasheet K1062 DatasheetK1062 Datasheet (PDF)

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1062 High Speed Switching Applications Analog Switching Applications Interface Applications 2SK1062 Unit: mm • Excellent switching time: ton = 14 ns (typ.) • High forward transfer admittance: |Yfs| = 100 ms (min) @ID = 50 mA • Low on resistance: RDS (ON) = 0.6 Ω (typ.) @ ID = 50 mA • Enhancement-mode • Complementary to 2SJ168 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Gate-sou.

  K1062   K1062






Part Number K1069
Manufacturers Sanyo
Logo Sanyo
Description 2SK1069
Datasheet K1062 DatasheetK1069 Datasheet (PDF)

Ordering number:EN2749 N-Channel Junction Silicon FET 2SK1069 Low-Frequency General-Purpose Amplifier Applications Applications · Low-frequency general-purpose amplifiers. · Ideal for use in variable resistors, analog switches, low-frequency amplifiers, and constant-current circuits. Features · Adoption of FBET process. · Ultrasmall-sized package permitting 2SK1069- applied sets to be made smaller and slimmer. Package Dimensions unit:mm 2058 [2SK1069] 0.425 0.3 3 0.15 0 to 0.1 0.2 2.1 1..

  K1062   K1062







Part Number K1068
Manufacturers Sanyo
Logo Sanyo
Description 2SK1068
Datasheet K1062 DatasheetK1068 Datasheet (PDF)

Ordering number:EN2748 N-Channel Junction Silicon FET 2SK1068 Impedance Conversion Applications Applications · Impedance conversion. · Infrared sensor. Features · Small IGSS. · Small Crss. · Ultrasmall-sized package permitting 2SK1068- applied sets to be made smaller and slimmer. Package Dimensions unit:mm 2058 [2SK1068] 0.425 0.3 3 0.15 0 to 0.1 0.2 2.1 1.250 12 0.65 0.65 2.0 0.3 0.6 0.9 0.425 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage G.

  K1062   K1062







Part Number K1067
Manufacturers Sanyo
Logo Sanyo
Description 2SK1067
Datasheet K1062 DatasheetK1067 Datasheet (PDF)

Ordering number:EN2719 N-Channel Silicon MOSFET 2SK1067 FM Tuner, VHF-Band Amplifier Applications Features · Low noise NF=1.8dB typ (f=100MHz). · High power gain PG=27dB typ (f=100MHz). · Small reverse transfer capacitance Crss=0.035pF (VDS=10V, f=1MHz). · Ultrasmall-sized package (MCP) permitting 2SK1067-applied sets to be made smaller and slimmer. Package Dimensions unit:mm 2057 [2SK1067] 0.425 0.3 3 0.15 0 to 0.1 0.2 2.1 1.250 0.425 12 0.65 0.65 2.0 0.3 0.9 0.6 Specifications Ab.

  K1062   K1062







Part Number K1066
Manufacturers Sanyo
Logo Sanyo
Description 2SK1066
Datasheet K1062 DatasheetK1066 Datasheet (PDF)

Ordering number:EN2747 N-Channel Junction Silicon FET 2SK1066 High-Frequency General-Purpose Amplifier Applications Applications · High-frequency general-purpose amplifier. · AM tuner RF amplifier. · Low-noise amplifier. Features · Large yfs. · Small Crss. · Ultralow noise figure. · Ultrasmall-sized package permitting 2SK1066- applied sets to be made smaller and slimmer. Package Dimensions unit:mm 2058 [2SK1066] 0.425 0.3 3 0.15 0 to 0.1 0.2 2.1 1.250 12 0.65 0.65 2.0 0.3 0.6 0.9 0..

  K1062   K1062







Part Number K1065
Manufacturers Sanyo
Logo Sanyo
Description 2SK1065
Datasheet K1062 DatasheetK1065 Datasheet (PDF)

Ordering number:ENN2746A N-Channel Junction Silicon FET 2SK1065 High-Frequency General-Purpose Amplifier Applications Features · Ultrasmall package facilitates miniaturization in end products. · Small Crss (Crss=0.04pF typ). 0.425 Package Dimensions unit:mm 2057A [2SK1065] 0.3 3 0.15 0.2 0 to 0.1 2.1 1.250 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature .

  K1062   K1062







2SK1062

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1062 High Speed Switching Applications Analog Switching Applications Interface Applications 2SK1062 Unit: mm • Excellent switching time: ton = 14 ns (typ.) • High forward transfer admittance: |Yfs| = 100 ms (min) @ID = 50 mA • Low on resistance: RDS (ON) = 0.6 Ω (typ.) @ ID = 50 mA • Enhancement-mode • Complementary to 2SJ168 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current DC Pulse Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range VDS VGSS ID IDP PD Tch Tstg 60 ±20 200 800 200 150 −55~150 V V mA mW °C °C JEDEC ― JEITA SC-59 TOSHIBA 2-3F1F Weight: 0.012 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking 1 2007-11-01 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut-off current Drain-source.


2015-05-29 : K1061    K1442    K1447    K1443    K1451    K1448    A8240    A8113    A8230A    A8280   


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