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K08T120

IGBT

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TrenchStop® Series

IKW08T120

Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft,

fast recovery anti-parallel Emitter Controlled HE diode

C

 Approx. 1.0V reduced VCE(sat) and 0.5V reduced VF compared to BUP305D
 Short circuit withstand time – 10s
 Designed for :

G E

- Frequency Converters

- Uninterrupted Power Supply  TrenchStop® and Fieldstop technology for 1200 V applications

offers :

- very tight parameter distribution - high ruggedness, temperature stable behavior

PG-TO-247-3

 NPT technology offers easy parallel switching capability due to

positive temperature coefficient in VCE(sat)  Low EMI

 Low Gate Charge

 Very soft, fast recovery anti-parallel Emitter Controlled HE diode  Qualified according to JEDEC1 for target applications

 Pb-free lead plating; RoHS compliant

 Complete product spectrum and PSpice Models : www.infineon.com/igbt/

Type

VCE

IC VCE(sat),Tj=25°C Tj,max Marking Code

IKW08T120 1200V 8A

1.7V

150C K08T120

Maximum Ratings

Parameter

Symbol

Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE  1200V, Tj  150C Diode forward current TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time2) VGE = 15V, VCC  1200V, Tj  150C Power dissipation TC = 25C Operating junction temperature Storage temperature

VCE IC
ICpuls -
IF
IFpuls VGE tSC
Ptot
Tj Tstg

Package PG-TO-247-3
Value 1200
16 8 24 24
16 8 24 20 10
70
-40...+150 -55...+150

Unit V A
V s W C

1 J-STD-020 and JESD-022 2) Allowed number of short circuits: <1000; time between short circuits: >1s.

IFAG IPC TD VLS

1

Rev. 2.4 12.06.2013

TrenchStop® Series
Soldering temperature, 1.6mm (0.063 in.) from case for 10s -

IKW08T120
260

IFAG IPC TD VLS

2

Rev. 2.4 12.06.2013

TrenchStop® Series

IKW08T120

Thermal Resistance
Parameter
Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient

Symbol RthJC RthJCD RthJA

Conditions

Max. Value 1.7 2.3 40

Unit K/W

Electrical Characteristic, at Tj = 25 C, unless otherwise specified

Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage Zero gate voltage collector current
Gate


























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