Home >> K07N120 Search >> K07N120 Datasheet

(PDF) K07N120 Datasheet Download




Infineon Technologies
Infineon Technologies


K07N120

Fast IGBT in NPT-technology

Click to Download PDF File   |   Unit Price & Buy Now   |   View for Mobile


Pages Preview : #1    #2    #3    #4    #5    #6    #7    #8    #9

SKW07N120


Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
• Lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability 1 • Qualified according to JEDEC for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models : www.infineon.com/igbt/ Type SKW07N120 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature, wavesoldering, 1.6mm (0.063 in.) from case for 10s Tj , Tstg Ts -55...+150 260 °C
2

C

G

E

PG-TO-247-3-1 (TO-247AC)

VCE 1200V

IC 8A

Eoff 0.7mJ

Tj 150°C

Marking K07N120

Package PG-TO-247-3-21

Symbol VCE IC

Value 1200 16.5 7.9

Unit V A

ICpul s IF

27 27

13 7 IFpul s VGE tSC Ptot 27 ±20 10 125 V µs W

VGE = 15V, 100V ≤ VCC ≤ 1200V, Tj ≤ 150°C

1 2

J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2_1 Apr 06

Power Semiconductors

SKW07N120


Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 5 00 µ A VCE(sat) V G E = 15 V , I C = 8 A T j =2 5 ° C T j =1 5 0 ° C Diode forward voltage VF V G E = 0V , I F = 7 A T j =2 5 ° C T j =1 5 0 ° C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 35 0 µ A , V C E = V G E V C E =1200V,V G E =0V T j =2 5 ° C T j =1 5 0 ° C Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector 


























TEXT Create



Searches related to K07N120 part

Find Chips chip 1 stop Newark verical
Digi-Key AVNET ARROW FUTURE ELECTRONICS
ALLIED ELECTRONICS IC Base online components bisco ind
Rochester Electronics MOUSER Quest Components Datasheets360
Freelance Electronics Sager Electronics Terminals & Connectors TTI

0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z
@ 2014 :: DatasheetsPDF.com :: Semiconductors Datasheet Search & Download Site