JX2N7227

D TO-254 G S POWER MOS IV MAXIMUM RATINGS Symbol VDSS VGS ID IDM IAR Parameter Drain-Source Voltage Gate-Source Voltage TM 2N7227 400 Volt JX2N7227* JV2N7227* 0.315Ω *QUALIFIED TO MIL-S-19500/592 31/7/92 JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS All Ratings: TC = 25°C unless otherwise specified. 2N7227 UNIT Volts 400 ±20 14 Continuous Drain Current @ TC = 100°C Pulsed Drain Current Avalanche Current 1 1 ed at R he MIN Continuous Drain Current @ TC = 25°C 9 Amps 56 14 150 Watts Total Power Dissipation @ TC = 25°C PD Total Power Dissipation @ TC = 100°C Linear Derating Factor EAS EAR TJ,TSTG TL Single Pulse Avalanche Energy Repetitive Avalanche Energy 60 1.2 700 15 -55 to 150 300 °C W/K mJ Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering Conditions: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS VGS(TH) IDSS IGSS ID(ON) Characteristic / Test Conditions va la nc TYP MAX UNIT Volts Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 400 2 4 25 250 ±100 14 0.315 0.680 0.415 A Gate Threshold Voltage (VDS = VGS, ID = 250µA) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) On State Drain Current 2 µA nA Amps (VDS > ID(ON) x R DS(ON) Max, VGS = 10V) 2 2 2 Drain-Source On-State Resistance RDS(ON) Drain-Source On-State Resistance Drain-Source On-State R...