JDV2S08S
TOSHIBA DIODE Silicon Epitaxial Planar Type
JDV2S08S
VCO for UHF Band Radio
· · · High Capacitance Ratio : C1V...
JDV2S08S
TOSHIBA DIODE Silicon Epitaxial Planar Type
JDV2S08S
VCO for UHF Band Radio
· · · High Capacitance Ratio : C1V/C4V = 3.0 (typ.) Low Series Resistance : rs = 0.35 Ω (typ.) This device is suitable for use in a small-size tuner. Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Reverse
voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 150 -55~150 Unit V °C °C
JEDEC JEITA TOSHIBA
― ― 1-1K1A
Electrical Characteristics (Ta = 25°C)
Characteristics Reverse
voltage Reverse current Capacitance Capacitance ratio Series resistance Symbol VR IR C1V C4V C1V/C4V rs I R = 1 mA VR = 10 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz ¾ VR = 1 V, f = 470 MHz Test Condition
Weight: 0.0011 g (typ.)
Min 10 ¾ 17.3 5.3 2.8 ¾ Typ. ¾ ¾ 18.3 6.1 3 0.35 Max ¾ 3 19.3 6.6 ¾ 0.45 Unit V nA pF ¾ W
Note: Signal level when capacitance is measured: Vsig = 500 mVrms
Marking
C
1
2002-01-23
JDV2S08S
CV – VR
100 f = 1 MHz 50 Ta = 25°C 0.4 0.5
rs – VR
f = 470 MHz Ta = 25°C
(pF)
30
Series resistance rs
1 2 3 4 5 6 7 8 9 10
(9)
Capacitance CV
0.3
10 5 3
0.2
0.1
1 0
0 0.1
0.3
1
3
10
Reverse
voltage VR
(V)
Reverse
voltage VR
(V)
dC – Ta
(%)
4 f = 1 MHz VR = 1 V 2 2 4 6 0
Capacitance change Ratio @C
-2
-4 -40
-20
0
20
40
60
80
100
Ambient temperature Ta (°C)
2
2002-01-23
JDV2S08S
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor ...