JDH2S01T

JDH2S01T TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type JDH2S01T UHF Band Mixer · Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Maximum (peak) reverse voltage Forward current Junction temperature Storage temperature range Symbol VRM IF Tj Tstg Rating 5 30 125 -55~125 Unit V mA °C °C JEDEC JEITA TOSHIBA ― ― 1-1H1A Electrical Characteristics (Ta = 25°C) Characteristics Forward voltage Forward current Reverse current Capacitance Symbol VF IF IR CT IF = 2 mA VF = 0.5 V VR = 0.5 V VR = 0.2 V, f = 1 MHz Test Condition Weight: 0.0013 g (typ.) Min ¾ 30 ¾ ¾ Typ. 0.25 ¾ ¾ 0.6 Max ¾ ¾ 25 ¾ Unit V mA mA pF Note: Signal level when capacitance is measured: Vsig = 20 mVrms Marking 1 2003-03-24 JDH2S01T RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are us...