JCS20N65H

N R N-CHANNEL MOSFET JCS20N65H MAIN CHARACTERISTICS Package ID 20A VDSS 650 V Rdson（@Vgs=10V） 0.43 Ω Qg 50nC z z z LED APPLICATIONS z High frequency switching mode power supply z Electronic ballast z LED power supply z z Crss ( 85pF) z z z dv/dt zRoHS FEATURES zLow gate charge zLow Crss (typical 85pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product ORDER MESSAGE Order codes Marking Package Halogen Free JCS20N65WH-O-W-N-B JCS20N65WH TO-247 NO JCS20N65FH-O-F-N-B JCS20N65FH TO-220MF NO Packaging Tube Tube Device Weight 5.20 g(typ) 2.20 g(typ) ：201407A 1/11 R ABSOLUTE RATINGS (Tc=25℃) JCS20N65H Parameter Symbol Value JCS20N65WH JCS20N65FH － Drain-Source Voltage VDSS 650 Drain Current -continuous ID T=25℃ T=100℃ 20 12.5 （ 1） Drain Current – pulse（note 1） IDM 80 Gate-Source Voltage VGSS ±30 （ 2） Single Pulsed Avalanche Energy（note 2）EAS 108 （ 1） Avalanche Current（note 1） IAR 20 （ 1） Repetitive Avalanche Energy （note 1） EAR 20.7 （ 3） Peak Diode Recovery dv/dt（note 3） dv/dt 50 Power Dissipation PD TC=25℃ -Derate above 25℃ 272 2.17 55 0.31 Operating and Storage Temperature Range TJ，TSTG -55～+150 Maximum Lead Temperature for Soldering Purposes TL * *Drain current limited by maximum junction temperature 300 Unit V A A A V mJ A mJ V/ns W W/℃ ℃ ℃ ：201407A 2/11 R JCS20N65H Parameter Symbol Tests conditions Min Typ Max Units Off –Characteristics －...