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Provisional Data Sheet No. PD-9.433B
HEXFET
®
JANTX2N6802 POWER MOSFET JAN...
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Index
Next Data Sheet
Provisional Data Sheet No. PD-9.433B
HEXFET
®
JANTX2N6802 POWER
MOSFET JANTXV2N6802 [REF:MIL-PRF-19500/557] [GENERIC:IRFF430]
N-CHANNEL Product Summary
Part Number JANTX2N6802 JANTXV2N6802 BVDSS 500V RDS(on) 1.5Ω ID 2.5A
500 Volt, 1.5Ω HEXFET
HEXFET technology is the key to International Rectifier’s advanced line of power
MOSFET transistors. The efficient geometry achieves very low onstate resistance combined with high transconductance. HEXFET transistors also feature all of the well-establish advantages of
MOSFETs, such as
voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio
amplifiers, and high energy pulse circuits, and virtually any application where high reliability is required.
Features:
s s s s s
Avalanche Energy Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed
Absolute Maximum Ratings
Parameter
ID @ V GS = 10V, TC = 25°C I D @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source
Voltage Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight
JANTX2N6802, JANTXV2N6802 Units
2.5 1.5 11 25 0.20 ±20 3.5 -55 to 150 300 (0.063 in. (1.6mm...