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JANTX2N6796 Datasheet

Part Number JANTX2N6796
Manufacturers International Rectifier
Logo International Rectifier
Description POWER MOSFET N-CHANNEL
Datasheet JANTX2N6796 DatasheetJANTX2N6796 Datasheet (PDF)

PD - 90430C REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS THRU-HOLE (TO-205AF) Product Summary Part Number BVDSS IRFF130 100V RDS(on) 0.18Ω ID 8.0A IRFF130 JANTX2N6796 JANTXV2N6796 REF:MIL-PRF-19500/557 100V, N-CHANNEL The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconducta.

  JANTX2N6796   JANTX2N6796






Part Number JANTX2N6798
Manufacturers International Rectifier
Logo International Rectifier
Description POWER MOSFET N-CHANNEL
Datasheet JANTX2N6796 DatasheetJANTX2N6798 Datasheet (PDF)

PD-90431D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTORS THRU-HOLE - TO-205AF (TO-39) Product Summary Part Number BVDSS IRFF230 200V RDS(on) 0.40Ω ID 5.5A IRFF230 JANTX2N6798 JANTXV2N6798 REF:MIL-PRF-19500/557 200V, N-CHANNEL The HEXFET®technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transco.

  JANTX2N6796   JANTX2N6796







Part Number JANTX2N6794U
Manufacturers International Rectifier
Logo International Rectifier
Description REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS
Datasheet JANTX2N6796 DatasheetJANTX2N6794U Datasheet (PDF)

PD - 93986 REPETITIVE A V ALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18)  IRFE420 JANTX2N6794U JANTXV2N6794U [REF:MIL-PRF-19500/555] 500V, N-CHANNEL Product Summary Part Number IRFE420 BVDSS 500V RDS(on) 3.0Ω ID 1.4A The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface mount technology. Desinged to be a close replacement for the TO-39 package, the LCC will give designers the extra flexibility they need to increas.

  JANTX2N6796   JANTX2N6796







Part Number JANTX2N6794
Manufacturers International Rectifier
Logo International Rectifier
Description POWER MOSFET N-CHANNEL
Datasheet JANTX2N6796 DatasheetJANTX2N6794 Datasheet (PDF)

PD - 90429D IRFF420 JANTX2N6794 REPETITIVE AVALANCHE AND dv/dt RATED JANTXV2N6794 HEXFET®TRANSISTORS REF:MIL-PRF-19500/555 THRU-HOLE (TO-205AF) 500V, N-CHANNEL Product Summary Part Number BVDSS IRFF420 500V RDS(on) 3.0Ω ID 1.5A The HEXFET®technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low onstate resistance combined with high transcond.

  JANTX2N6796   JANTX2N6796







Part Number JANTX2N6792
Manufacturers International Rectifier
Logo International Rectifier
Description POWER MOSFET N-CHANNEL
Datasheet JANTX2N6796 DatasheetJANTX2N6792 Datasheet (PDF)

PD -90428D IRFF320 JANTX2N6792 REPETITIVE AVALANCHE AND dv/dt RATED JANTXV2N6792 HEXFET®TRANSISTORS REF:MIL-PRF-19500/555 THRU-HOLE (TO-205AF) 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) IRFF320 400V 1.8Ω ID 2.0A The HEXFET®technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transcondu.

  JANTX2N6796   JANTX2N6796







POWER MOSFET N-CHANNEL

PD - 90430C REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS THRU-HOLE (TO-205AF) Product Summary Part Number BVDSS IRFF130 100V RDS(on) 0.18Ω ID 8.0A IRFF130 JANTX2N6796 JANTXV2N6796 REF:MIL-PRF-19500/557 100V, N-CHANNEL The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of parelleling and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. TO-39 Features: n Repetitive Avalanche Ratings n Dynamic dv/dt Rating n Hermetically Sealed n Simple Drive Requirements n Ease of Paralleling Absolute Maximum Ratings ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C Parameter Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ TJ TSTG Operating Junction Storage Temperature Range Lead Temperature Weight Units 8.0 5.0 A 32.


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