JANSR2N7399
Formerly FSS130R4
June 1998
11A, 100V, 0.210 Ohm, Rad Hard, N-Channel Power MOSFET
Description
The Discrete...
JANSR2N7399
Formerly FSS130R4
June 1998
11A, 100V, 0.210 Ohm, Rad Hard, N-Channel Power
MOSFET
Description
The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened
MOSFETs specifically designed for commercial and military space applications. Enhanced Power
MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed. The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a variety of
voltage, current and on-resistance ratings. Numerous packaging options are also available. This
MOSFET is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to be radiation tolerant. The
MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits.
BRAND JANSR2N7399
Features
11A, 100V, rDS(ON) = 0.210Ω Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) Single Event - Safe Operating Area Curve fo...