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DC COMPONENTS CO., LTD.
R
J882
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL...
www.DataSheet4U.com
DC COMPONENTS CO., LTD.
R
J882
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in output stage of 10W audio amplifier,
voltage regulator, DC-DC converter, and relay driver.
TO-252(DPAK)
Pinning
1 = Base 2 = Collector 3 = Emitter
.268(6.80) .252(6.40) o .217(5.50) .205(5.20) .063(1.60) .055(1.40) .077(1.95) .065(1.65) .022(0.55) .018(0.45)
Absolute Maximum Ratings(TA=25
Characteristic Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current (DC) Collector Current (pulse) Base Current (DC) Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature
o
C) Rating 40 30 5 3 7 600 10 +150 -55 to +150 Unit V V V A A mA W
o o .035 Max (0.90)
Symbol VCBO VCEO VEBO IC IC IB PD TJ TSTG
2 .228(5.80) .213(5.40) 1 2 3 .059(1.50) .035(0.90)
.032 Max (0.80)
.110(2.80) .087(2.20) .091 Typ (2.30) .024(0.60) .018(0.45)
C
Dimensions in inches and (millimeters)
C
Electrical Characteristics o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) hFE1 hFE2 fT Cob 380µs, Duty Cycle 2%
Min 40 30 5 30 100 -
Typ 0.3 1 90 45
Max 1 1 0.5 2 500 -
Unit V V V µA µA V V MHz pF
Test Conditions IC=100µA, IE=0 IC=1mA, IB=0 IE=10µA, IC=0 VCB=30V, IE=0 VEB=3V, IC=0 IC=2A, IB=0.2A IC=2A, IB=0.2A IC=20mA, VCE=2V IC=1A, VCE=2V IC=0.1A, VCE=5V, f=100MHz VCB=10V, f=1MHz
Collector-Base Break...