Ordering number : EN8584
2SJ659
P-Channel Silicon MOSFET
2SJ659
Features
• • • • •
General-Purpose Switching Device ...
Ordering number : EN8584
2SJ659
P-Channel Silicon
MOSFET
2SJ659
Features
General-Purpose Switching Device Applications
Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source
Voltage Gate-to-Source
Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10µs, duty cycle≤1% Tc=25°C Conditions Ratings --60 ±20 --14 --56 1.65 40 150 --55 to +150 85 --14 Unit V V A A W W °C °C mJ A
Note : *1 VDD=30V, L=500µH, IAV=--14A *2 L≤500µH, Single pulse
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown
Voltage Zero-Gate
Voltage Drain Current Gate-to-Source Leakage Current Cutoff
Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=--1mA, VGS=0V VDS=-60V, VGS=0V VGS= ±16V, VDS=0V VDS=-10V, ID=--1mA VDS=-10V, ID=-7A ID=--7A, VGS=-10V ID=--7A, VGS=-4V Ratings min --60 --1 ±10 --1.2 7 12 102 147 133 206 --2.6 typ max Unit V
µA µA
V S mΩ mΩ
Marking : J659
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-...