J449

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ449 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ449 is P-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) 10.0 ±0.3 3.2 ±0.2 4.5 ±0.2 2.7 ±0.2 FEATURES Low On-Resistance RDS(on) = 0.8 Ω MAX. (@ VGS = –10 V, ID = –3.0 A) 15.0 ±0.3 12.0 ±0.2 13.5 MIN. Low Ciss Ciss = 1040 pF TYP. High Avalanche Capability Ratings Isolated TO-220 Package ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* VDSS VGSS ID(DC) ID(pulse) –250 m 30 m 6.0 m 24 V V A A W W ˚C A mJ 0.7 ±0.1 2.54 4 ±0.2 3 ±0.1 1.3 ±0.2 1.5 ±0.2 2.54 0.65 ±0.1 2.5 ±0.1 Total Power Dissipation (Tc = 25 ˚C) PT1 Total Power Dissipation (TA = 25 ˚C) PT2 Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW ≤ 10 µs, Duty Cycle ≤ 1 % Tch Tstg IAS EAS 35 2.0 150 –6.0 180 –55 to +150 ˚C 1 2 3 1. Gate 2. Drain 3. Source MP-45F(ISOLATED TO-220) Drain ** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = –20 V → 0 Gate Body Diode Source www.DataSheet4U.com Document No. D10030EJ1V0DS00 Date Published May 1995 P Printed in Japan © 1995 2SJ449 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC Drain to Source On-Resistance Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Cap...