DISCRETE SEMICONDUCTORS
DATA SHEET
J210; J211; J212 N-channel field-effect transistors
Product specification File under...
DISCRETE SEMICONDUCTORS
DATA SHEET
J210; J211; J212 N-channel field-effect transistors
Product specification File under Discrete Semiconductors, SC07 1997 Dec 01
Philips Semiconductors
Product specification
N-channel field-effect transistors
FEATURES High speed switching Interchangeability of drain and source connections High impedance. APPLICATIONS Analog switches Choppers, multiplexers and commutators Audio
amplifiers. DESCRIPTION N-channel symmetrical junction field-effect transistor in a TO-92 (SOT54) package. CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
Marking codes: J210: J210. J211: J211. J212: J212.
handbook, halfpage 2
J210; J211; J212
PINNING - TO-92 (SOT54) PIN 1 2 3 SYMBOL g s d gate source drain DESCRIPTION
1
3 g
MAM197
d s
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA SYMBOL VDS VGSoff PARAMETER drain-source
voltage gate-source cut-off
voltage J210 J211 J212 IDSS drain current J210 J211 J212 Ptot yfs total power dissipation common-source transfer admittance J210 J211 J212 Tamb ≤ 50 °C VGS = 0; VDS = 15 V 4 6 7 12 12 12 mS mS mS VGS = 0; VDS = 15 V 2 7 15 − 15 20 40 400 mA mA mA mW ID = 1 nA; VDS = 15 V −1 −2.5 −4 −3 −4.5 −6 V V V CONDITIONS − MIN. MAX. ±25 UNIT V
1997 Dec 01
2
Philips Semiconductors
Product specification
N-channel field-effect...