IXYB82N120C3H1

1200V XPT TM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching IXYB82N120C3H1 VCES IC110 VCE(sat) tfi(typ) PLUS264TM = = ≤ = 1200V 82A 3.2V 93ns Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 IF110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C (Chip Capability) Lead Current Limit TC = 110°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 125°C, RG = 2Ω Clamped Inductive Load TC = 25°C Maximum Ratings 1200 1200 ±20 ±30 164 1 60 82 42 320 41 800 ICM = 164 @VCE ≤ VCES 1040 -55 ... +150 150 -55 ... +150 V V V V A A A A A A mJ A W °C °C °C °C °C N/lb. g G C E Tab G = Gate E = Emitter C = Collector Tab = Collector Features z z z z z z z Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Force 300 260 30..120 / 6.7..27 10 Optimized for Low Switching Losses Square RBSOA Anti-Parallel Ultra Fast Diode Positive Thermal Coefficient of Vce(sat) Avalanche Rated High Current Handling Capability International Standard Package Advantages z z High Power Density Low Gate Drive Requirement Applications Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250μA, VGE = 0V = 250μA, VCE = VGE TJ = 125°C 2.75 3.50 Characteristic Values Min. Typ. Max. 1200 3.0 5.0 V V z z z z z z z z VCE = VCES, VGE = 0V VCE = 0V, VGE = ±20V IC 50 μA 3 mA ±100 3.20 nA V V High Frequency ...