IXUC160N075

ADVANCED TECHNICAL INFORMATION Trench Power MOSFET IXUC160N075 ISOPLUS220TM Electrically Isolated Back Surface VDSS = ID25 = RDS(on) = 75 V 160 A 6.5 mΩ ISOPLUS 220TM Symbol Test Conditions Maximum Ratings VDSS VGS ID25 ID90 IS25 IS90 ID(RMS) EAS PD TJ TJM Tstg TL VISOL FC Weight TJ = 25°C to 150°C Continuous TC = 25°C; Note 1 TC = 90°C, Note 1 TC = 25°C; Note 1, 2 TC = 90°C, Note 1, 2 Package lead current limit TC = 25°C TC = 25°C 1.6 mm (0.062 in.) from case for 10 s RMS leads-to-tab, 50/60 Hz, t = 1 minute Mounting force 75 V ±20 V 160 A 130 A 160 A 120 A 50 A tbd mJ 300 W -55 ... +175 °C 175 °C -55 ... +150 °C 300 °C 2500 V~ 11 ... 65 / 2.4 ...11 N/lb 2 g Symbol RDS(on) VGS(th) IDSS IGSS Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VGS = 10 V, ID = 100 A, Note 3 VGS = 10 V, ID = ID90, Note 3 VDS = VGS, ID = 2 mA VVDGSS = = 0VDVSS TTJJ = = 25°C 125°C VGS = ±20 VDC, VDS = 0 6.5 mΩ 10.2 mΩ 2 1 4V 20 µA mA ±200 nA G DS G = Gate, S = Source Isolated back surface* D = Drain, Features z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Trench MOSFET - very fast lsowwitcRhDiSn(ogn) - usable intrinsic reverse diode z Low drain to tab capacitance(<15pF) z Unclamped Inductive Switching (UIS) rated Applications z Automotive 42V and 12V systems - electronic switches to replace relays an...