TrenchT2TM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated
IXTY90N055T2 IXTA90N055T2 IXTP90N055T2
Symbol VDSS...
TrenchT2TM Power
MOSFETs
N-Channel Enhancement Mode Avalanche Rated
IXTY90N055T2 IXTA90N055T2 IXTP90N055T2
Symbol VDSS VDGR
VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL
Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C
1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-220) TO-252 TO-263 TO-220
Maximum Ratings 55 55
V V
± 20 V
90 A 75 A 230 A
50 A 300 mJ
150 W
-55 ... +175 175
-55 ... +175
300 260
1.13 / 10
0.35 2.50 3.00
°C °C °C
°C °C Nm/lb.in.
g g g
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = ± 20V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V TJ = 150°C
RDS(on)
VGS = 10V, ID = 25A, Notes 1, 2
Characteristic Values Min. Typ. Max.
55 V
2.0 4.0 V
±200 nA 2 μA
200 μA 7.0 8.4 mΩ
© 2012 IXYS CORPORA...
