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IXTY44N10T

IXYS Corporation

Power MOSFET

TrenchTM Power MOSFET IXTY44N10T IXTP44N10T VDSS = 100V ID25 = 44A RDS(on)  30m N-Channel Enhancement Mode Avalanch...


IXYS Corporation

IXTY44N10T

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TrenchTM Power MOSFET IXTY44N10T IXTP44N10T VDSS = 100V ID25 = 44A RDS(on)  30m N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient TC = 25C Lead Current Limit, (RMS) (TO-252) TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  175C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220) TO-252 TO-220 Maximum Ratings 100 V 100 V 20 V 30 V 44 A 25 A 110 A 10 A 250 mJ 12 V/ns 130 W -55 ... +175 175 -55 ... +175 300 260 1.13 / 10 0.35 3.00  C  C  C °C °C Nm/lb.in. g g Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250A VGS(th) VDS = VGS, ID = 25A IGSS VGS =  20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 150C RDS(on) VGS = 10V, ID = 0.5 ID25, Notes 1, 2 Characteristic Values Min. Typ. Max. 100 V 2.5 4.5 V             100 nA 1 A 200  A 30 m TO-252 (IXTY) TO-220 (IXTP) G S D (Tab) G DS D (Tab) G = Gate D = Drain S = Source Tab = Drain Features  International Standard Packages  175°C Operating Temperature  Avalanche Rated  Low RDS(on)  High Current Handling Capability Advantages  Easy to Mount  Space Savings  High Power Density Applications  Automotive - Motor Drives - 24 / 48V Power Bus - ABS Syste...




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