IXTT88N15

www.DataSheet4U.com Advance Technical Information High Current Power MOSFET N-Channel Enhancement Mode IXTH 88N15 IXTT 88N15 V DSS I D25 RDS(on) = = = 150 V 88 A 22 mΩ Symbol V DSS V DGR VGS VGSM I D25 I DM I AR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 150 150 ± 20 ± 30 88 352 88 50 1.5 5 400 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C TO-247 AD (IXTH) (TAB) TO-268 (IXTT) Case Style G G = Gate S = Source S D = Drain TAB = Drain (TAB) Features z z z z 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-247 AD TO-268 300 1.13/10 Nm/lb.in. 6 4 g g z International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25°C, unless otherwise specified) V DSS VGS(th) IGSS IDSS R DS(on) VGS = 0 V, ID = 250 µA V DS = VGS, ID = 250µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C Characteristic Values Min. Typ. Max. 150 2.0 4.0 ±100 25 1 22 V V nA µA mA mΩ Advantages z z z Easy to mount Space savings High power density VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2003 IXYS All rights re...