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IXTQ180N085T
N-ChannelMOSFET
Description
isc N-Channel
MOSFET
Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 5.5mΩ@VGS=10V ·Fully characterized avalanche
voltage
and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Current Switching Applications ·ABSOLUTE MAXIMUM RATINGS(Ta=...
INCHANGE
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- IXYS Corporation
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