isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
:...
isc N-Channel
MOSFET Transistor
·FEATURES ·Drain Source
Voltage-
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 7mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switch-Mode and Resonant-Mode Power Supplies ·DC-DC Converters ·AC and DC Motor Drives ·Robotics and Servo Controls
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source
Voltage
100
V
VGS
Gate-Source
Voltage-Continuous
±30
V
ID
Drain Current-Continuous
160
A
IDM
Drain Current-Single Plused
430
A
PD
Total Dissipation @TC=25℃
430
W
Tj
Max. Operating Junction Temperature -55~175 ℃
Tstg
Storage Temperature
-55~175 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX 0.35
UNIT ℃/W
IXTQ160N10T
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc N-Channel
MOSFET Transistor
IXTQ160N10T
·ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYPE MAX UNIT
V(BR)DSS Drain-Source Breakdown
Voltage
VGS= 0; ID=250µA
100
V
VGS(th) Gate Threshold
Voltage
VDS= VGS; ID=250uA
2.5
4.5
V
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 25A
7
mΩ
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate
Voltage Drain Current
VSD
Diode Forward On-
voltage
VGS= ±20V;VDS= 0
VDS=100V; VGS= 0 VDS=100V; VGS= 0;TJ=150℃
IF= 25A ;VGS= 0
±200 nA
5 250
µA
1
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