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IXTP24P085T Datasheet

Part Number IXTP24P085T
Manufacturers IXYS
Logo IXYS
Description Power MOSFET
Datasheet IXTP24P085T DatasheetIXTP24P085T Datasheet (PDF)

TrenchPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTA24P085T IXTP24P085T VDSS = ID25 = ≤RDS(on) - 85V - 24A 65mΩ TO-263 AA (IXTA) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-220) TO-220 TO-263 Maximum .

  IXTP24P085T   IXTP24P085T






Part Number IXTP24P085T
Manufacturers INCHANGE
Logo INCHANGE
Description P-Channel MOSFET
Datasheet IXTP24P085T DatasheetIXTP24P085T Datasheet (PDF)

isc P-Channel MOSFET Transistor IXTP24P085T ·FEATURES ·Static drain-source on-resistance: RDS(on)≤65mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Hight side switching ·Current regulators ·Automatic test equipment ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -85 VGS Gate-Source Voltage ±15 ID Drain Current-Continuous -24 IDM Drain Current-Single Pulsed -80 PD To.

  IXTP24P085T   IXTP24P085T







Power MOSFET

TrenchPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTA24P085T IXTP24P085T VDSS = ID25 = ≤RDS(on) - 85V - 24A 65mΩ TO-263 AA (IXTA) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-220) TO-220 TO-263 Maximum Ratings - 85 - 85 V V ±15 V ±25 V - 24 A - 80 A - 24 A 200 mJ 83 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 1.13/10 °C °C Nm/lb.in. 3.0 g 2.5 g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = - 250μA VGS(th) VDS = VGS, ID = - 250μA IGSS VGS = ±15V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = -10V, ID = 0.5 • ID25, Note 1 Characteristic Values Min. Typ. Max. - 85 V - 2.5 - 4.5 V ±50 nA - 3 μA -100 μA 65 mΩ G S D (Tab) TO-220AB (IXTP) GD S D (Tab) G = Gate D = Drain S = Source Tab = Drain Features z International Standard Packages z Avalanche Rated z Extended FBSOA z Fast Intrinsic Diode z Low RDS(ON) and QG Advantages z Easy to Mount z Space Savings z High Power Density Applications z High-Side Switching z Push Pull Amplifiers z DC Choppers z Automatic Test Equipment z Current Regulators z Battery Charger Applications © 2013 IXYS CORPORATION, All Rights Reserved DS99969B(01/13) Symbol Test Con.


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