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IXTP160N10T

INCHANGE
Part Number IXTP160N10T
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Nov 19, 2020
Detailed Description isc N-Channel MOSFET Transistor IXTP160N10T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 7.0mΩ@VGS=10V ·Ful...
Datasheet PDF File IXTP160N10T PDF File

IXTP160N10T
IXTP160N10T

Overview
isc N-Channel MOSFET Transistor IXTP160N10T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 7.
0mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Current Switching Applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 160 IDM Drain Current-Single Pulsed 430 PD Total Dissipation @TC=25℃ 430 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERIS...


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