Power MOSFET
Description
TrenchT2TM GigaMOSTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXTN600N04T2
VDSS ID25
= =
RDS(on) ≤
40V 600A 1.3mΩ
miniBLOC, SOT-227 E153432
S
Symbol VDSS VDGR VGSM ID25 IL(RMS) IDM IA EAS PD TJ TJM Tstg TL TSOLD VISOL Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C (Ch...
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