DatasheetsPDF.com

IXTM5N100 Datasheet

Part Number IXTM5N100
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description Standard Power MOSFET
Datasheet IXTM5N100 DatasheetIXTM5N100 Datasheet (PDF)

Standard Power MOSFET VDSS IXTH / IXTM 5N100 IXTH / IXTM 5N100A 1000 V 1000 V ID25 5A 5A RDS(on) 2.4 Ω 2.0 Ω N-Channel Enhancement Mode Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C Maximum Ratings 1000 1000 ±20 ±30 5 20 180 -55 ... +150 150 -55 ... +150 V V V V A A W °C °C °C TO-247 AD (IXTH) D (TAB) TO-204 AA (IXTM) D G = Gat.

  IXTM5N100   IXTM5N100






Part Number IXTM5N100
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet IXTM5N100 DatasheetIXTM5N100 Datasheet (PDF)

isc N-Channel MOSFET Transistor FEATURES ·Drain Current ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.4Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drai.

  IXTM5N100   IXTM5N100







Standard Power MOSFET

Standard Power MOSFET VDSS IXTH / IXTM 5N100 IXTH / IXTM 5N100A 1000 V 1000 V ID25 5A 5A RDS(on) 2.4 Ω 2.0 Ω N-Channel Enhancement Mode Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C Maximum Ratings 1000 1000 ±20 ±30 5 20 180 -55 ... +150 150 -55 ... +150 V V V V A A W °C °C °C TO-247 AD (IXTH) D (TAB) TO-204 AA (IXTM) D G = Gate, S = Source, G Mounting torque 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 °C D = Drain, TAB = Drain Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Features l l l l l International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 2 4.5 ±100 TJ = 25°C TJ = 125°C 250 1 2.4 2.0 V V nA µA mA Ω Ω Applications l VDSS VGS(th) IGSS IDSS R DS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 250 µA VGS = ±20 VDC, VDS = 0 VDS = 0.8 • VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 l l l Switch-mode and resonant-mode power supplies Motor controls Uninterruptible Power Supplies (UPS) DC choppers Advantages l 5N100 5N100A Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % l l Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) S.


2005-04-05 : D8237A    D8237A    K9K1G08U0B    KS88C0916    KS88C2064    KS88C2148    KS88C2416    KS88C2432    KS88C4404    KS88C4504   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)