IXTK250N10

Advance Technical Information High Current MegaMOSTMFET N-Channel Enhancement Mode IXTK 250N10 VDSS ID25 RDS(on) = 100 V = 250 A = 5 mΩ Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1.0 MΩ Continuous Transient TC = 25°C MOSFET chip capability External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum ratings 100 100 ±20 ±30 250 75 1000 90 80 4.0 5 730 -55 ... +150 150 -55 ... +150 V V V V A A A A mJ J V/ns W °C °C °C °C Nm/lb.in. g G D S TO-264 AA (IXTK) D (TAB) G = Gate S = Source D = Drain Tab = Drain 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 300 0.7/6 10 Features Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure International standard package Fast switching times Applications Motor controls DC choppers Switched-mode power supplies DC-DC Converters Linear Regulators Advantages Easy to mount with one screw (isolated mounting screw hole) Space savings High power density Symbol Test Conditions (TJ = 25°C unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1 mA V DS = VGS, ID = 250 µA V GS = ±20 V DC, VDS = 0 V DS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C Characteristic Values Min. Typ. Max. 100 2.0 4.0 ±200 50 1 V V nA µA mA VGS = 10 V, ID = 90 A Pulse test, t ≤ 300 ms, du...