IXTH30N45

Preliminary Data Sheet MegaMOSTMFET N-Channel Enhancement Mode VDSS IXTH 30N45 450 V IXTH 30N50 500 V ID25 RDS(on) 30 A 0.16 Ω 30 A 0.17 Ω TO-247 AD Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg TL Md Weight Symbol VDSS VGS(th) IGSS IDSS R DS(on) Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient 30N45 30N50 30N45 30N50 450 500 450 500 ±20 ±30 TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 30 120 360 -55 ... +150 150 -55 ... +150 V V V V V V A A W °C °C °C 1.6 mm (0.063 in) from case for 10 s Mounting torque 300 °C 1.13/10 Nm/lb.in. 6g Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VGS = 0 V, ID = 5 mA 30N50 30N45 BV temperature coefficient DSS VDS = VGS, ID = 250µA V temperature coefficient GS(th) VGS = ±20 VDC, VDS = 0 VDS = 0.8 VDSS V =0V GS TJ = 25°C T J = 125°C V = 10 V, I = 0.5 I GS D D25 30N50 30N45 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 500 450 .087 2 -0.25 V V %/k 4V %/k ±100 nA 200 µA 3 mA 0.17 0.16 Ω Ω TO-247 SMD ( ...S ) D (TAB) G E C (TAB) G = Gate, D = Drain, S = Source, TAB = Drain *Add suffix letter "S" for TO-247 SMD package option (EX:IXTH30N50S) Features International standard package JEDEC TO-247 AD Low R DS (on) HDMOSTM process Rugged polysilicon gate cell structure High commutating dv/dt rating Fast switching times Applications Switch-mode and resonant-mode power suppl...