IXTH16P20

Advance Technical Information Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTH 16P20 VDSS ID25 RDS(on) = -200 V = -16 A = 0.22 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJ TC = 25°C TC = 25°C TC = 25°C Maximum Ratings -200 -200 ± 20 ± 30 -16 -64 -16 30 180 -55 ... +150 150 -55 ... +150 V V V V A A A mJ W °C °C °C °C TO-247 AD D (TAB) G = Gate, S = Source, D = Drain, TAB = Drain Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Mounting torque 300 Features International standard package JEDEC TO-247 AD Low RDS (on) HDMOSTM process 1.13/10 Nm/lb.in. 6 g Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance (<5 nH) - easy to drive and to protect Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. -200 -3.0 -5.0 ± 100 TJ = 25 ° C TJ = 125 ° C -25 -1 0.22 V V nA µA mA Ω VDSS VGS(th) IGSS IDSS RDS(on) V GS = 0 V, ID = -250 µA V DS = VGS, ID = -250 µA V GS = ±20 VDC, VDS = 0 V DS = 0.8 VDSS V GS = 0 V V GS = -10 V, ID = 0.5 ID25 Applications High side switching Push-pull amplifiers DC choppers Automatic test equipment Advantages Easy to mount with 1 screw (isolated mounting screw hole) Space savings High power density © 2002 IXYS...