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IXTH14N100

Part Number	IXTH14N100
Manufacturer	IXYS Corporation
Description	MegaMOSTMFET
Published	Apr 5, 2005
Detailed Description	IXTH 14N100 VDSS MegaMOSTMFET N-Channel Enhancement Mode ID25 RDS(on) = 1000 V = 14 A = 0.82 Ω Symbol VDSS VDGR VGS V...
Datasheet	IXTH14N100 PDF File

Overview

...GSM ID25 IDM PD TJ TJM T stg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C Maximum Ratings 1000 1000 ±20 ±30 14 56 360 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A W °C °C °C TO-247 AD D (TAB) G = Gate, S = Source, D = Drain, TAB = Drain Mounting torque 1.
13/10 Nm/lb.
in.
6 300 g °C Features l Maximum lead temperature for soldering 1.
6 mm (0.
062 in.
) from case for 10 s l l l International standard package JEDEC TO-247 AD Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Fast switching times Symbol Test Conditions Characteristic Values (TJ = 25°C, unless oth...

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