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IXTH130N10T

IXYS Corporation
Part Number IXTH130N10T
Manufacturer IXYS Corporation
Description Power MOSFET
Published Feb 13, 2015
Detailed Description TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH130N10T IXTQ130N10T VDSS = ID25 = RDS(on) ≤ 10...
Datasheet PDF File IXTH130N10T PDF File

IXTH130N10T
IXTH130N10T

Overview
TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH130N10T IXTQ130N10T VDSS = ID25 = RDS(on) ≤ 100V 130A 9.
1mΩ TO-247 (IXTH) Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.
6mm (0.
062in.
) from case for 10s Plastic body for 10 seconds Mounting torque (TO-247)(TO-3P) TO-247 TO-3P Maximum Ratings 100 100 V V ± 20 V 130 A 75 A 300 A 65 A 500 mJ 360 W -55 .
.
.
+175 175 -55 .
.
.
+175 300 260 1.
13 / 10 °C °C °C °C °C Nm/lb.
in.
6.
0 g 5.
5 g Symbol Test Conditions (T...


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