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IXTH11N80

Part Number	IXTH11N80
Manufacturer	IXYS
Description	MegaMOS FET
Published	Nov 1, 2015
Datasheet	IXTH11N80 PDF File

Features

q International standard packages

q Low R

HDMOSTM process

DS (on)

q Rugged polysilicon gate cell structure

q Low package inductance (< 5 nH)

- easy to drive and to protect

q Fast switching times

Symbol
V DSS
VGS(th) IGSS IDSS
R DS(on)

Test ...

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