Preliminary Technical Information
TrenchMVTM
IXTC250N075T
Power MOSFET
(Electrically Isolated Back Surface)
N-Chann...
Preliminary Technical Information
TrenchMVTM
IXTC250N075T
Power
MOSFET
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode Avalanche Rated
V= DSS
ID25 =
RDS(on) ≤
75 128 4.4
V A mΩ
Symbol
VDSS VDGR
VGSM
ID25 I
LRMS
IDM
IAR EAS
dv/dt
P D
TJ TJM Tstg
TL T
SOLD
V ISOL
FC
Weight
Test Conditions
TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ
Transient
Maximum Ratings
75 V 75 V
± 20
V
TC = 25°C Package Current Limit, RMS TC = 25°C, pulse width limited by TJM
TC = 25°C TC = 25°C
128 A 75 A
600 A
25 A 1.0 J
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS
T J
≤
175°C,
R G
=
3.3
Ω
T C
= 25°C
3 V/ns
160
-55 ... +175 175
-55 ... +175
W
°C °C °C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds
50/60 Hz, t = 1 minute, I < 1 mA, RMS ISOL
300 260
2500
°C °C
V
Mounting force
11..65/2.5..15
N/lb.
2g
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 μA
VGS(th)
VDS = VGS, ID = 250 μA
I
GSS
V GS
=
±
20
V,
V DS
=
0
V
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150°C
R DS(on)
V = 10 V, I = 25 A, Notes 1, 2 GS D
Characteristic Values Min. Typ. Max. 75 V
2.0 4.0 V
± 200 nA
5 μA 250 μA 4.4 m Ω
ISOPLUS220 (IXTC) E153432
G DS
G = Gate S = Source
Isolated back surface D = Drain
Features Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature
Advantages Easy to mount Space savings High power density
Appli...