IXTC13N50

www.DataSheet4U.com ADVANCE TECHNICAL INFORMATION Power MOSFET ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXTC 13N50 VDSS = 500 V ID25 = 12 A RDS(on) = 0.4 Ω ISOPLUS 220TM Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Weight 1.6 mm (0.062 in.) from case for 10 s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 500 500 ± 20 ± 30 12 48 13 18 5 140 -55 ... +150 150 -55 ... +150 300 3 V V V V A A A mJ V/ns W °C °C °C °C g l l l l G D S G = Gate, S = Source * Patent pending Isolated back surface* D = Drain, Features l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(<35pF) Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Applications l Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2 4 ± 100 TJ = 25°C TJ = 125°C 200 1 0.4 V V l l VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 2.5 mA VGS = ±20 VDC, VDS = 0 VDS = 0.8 VDSS VGS = 0 V V GS = 10 V, ID = IT Notes 1, 2 l l DC-DC converters Batterychargers Switched-mode and resonant-mode power supplies ...