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IXGP4N100

IXYS Corporation

Power MOSFET

Description
www.DataSheet4U.com Advanced Technical Information IGBT IXGA 4N100 IXGP 4N100 VCES = 1000 V IC25 = 8A VCE(sat) = 2.7 V Symbol VCES VCGR VGES VGEM I C25 I C90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 120 W Clamp...


IXYS Corporation

IXGP4N100

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