HiPerFAST IGBT
HiPerFASTTM IGBT with Diode
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IXGK 50N60AU1
Combi Pack
VCES IC25 VCE(sat) tfi
= = = =
600 V 75 A ...
Description
HiPerFASTTM IGBT with Diode
www.datasheet4u.com
IXGK 50N60AU1
Combi Pack
VCES IC25 VCE(sat) tfi
= = = =
600 V 75 A 2.7 V 275 ns
Symbol VCES VCGR VGES VGEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg Md Weight
Test Conditions TJ = 25 °C to 150°C TJ = 25 °C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25 °C, limited by leads TC = 90 °C TC = 25 °C, 1 ms VGE = 15 V, T VJ = 125°C, RG = 10 Ω Clamped inductive load, L = 30 µH TC = 25 °C
Maximum Ratings 600 600 ±20 ±30 75 50 200 ICM = 100 @ 0.8 VCES 300 -55 ... +150 150 -55 ... +150 V V V V A A A A
TO-264 AA
G
C
E C = Collector, TAB = Collector
G = Gate, E = Emitter,
Features W °C °C °C
l l l
l
Mounting torque (M4)
0.9/6 Nm/lb.in. 10 300 g °C
l l
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
International standard package JEDEC TO-264 AA High frequency IGBT and antiparallel FRED in one package 2nd generation HDMOSTM process Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM
Applications
l l l l l
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25°C TJ = 125°C 5.5 250 15 ±100 2.7 V V µA mA nA V
BVCES VGE(th) ICES I GES VCE(sat)
IC IC
= 500 µA, VGE = 0 V = 500 µA, VCE = VGE
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