IXGH30N60BD1

HiPerFASTTM IGBT with Diode IXGH 30N60BD1 VCES IXGT 30N60BD1 I C25 VCE(sat) tfi(typ) = 600 V = 60 A = 1.8 V = 100 ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load, L = 100 mH TC = 25°C Maximum Ratings 600 600 ±20 ±30 60 30 120 ICM = 60 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 300 1.13/10 TO-247 AD TO-268 6 4 V V V V A A A A W °C °C °C °C Nm/lb.in. g g TO-268 (IXGT) G E C (TAB) TO-247 AD (IXGH) G C E C (TAB) G = Gate, E = Emitter, Features C = Collector, TAB = Collector Maximum Lead and Tab temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque, TO-247 AD International standard package Moderate frequency IGBT and antiparallel FRED in one package High current handling capability Newest generation HDMOSTM process MOS Gate turn-on - drive simplicity Applications AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25°C TJ = 150°C 5.0 200 3 ±100 1.8 V V mA mA nA V BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250mA, VGE = 0 V = 250 mA, VCE = VGE Advantages Space savings (two devices in one package) High...