High Voltage IGBT w/ Diode
IXGH28N120BD1 IXGT28N120BD1
VCES =
IC25 VCE(sat)
= ≤
tfi(typ) =
1200V 50A 3.5V 170ns
T...
High
Voltage IGBT w/ Diode
IXGH28N120BD1 IXGT28N120BD1
VCES =
IC25 VCE(sat)
= ≤
tfi(typ) =
1200V 50A 3.5V 170ns
TO-247AD (IXGH)
Symbol
VCES VCGR
VGES VGEM IC25 IICF91000 ICM SSOA
(RBSOA)
PC
TJ TJM Tstg
TL TSOLD
Md Weight
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
Continuous Transient
TC = 25°C ( Chip Capability )
TTCC
= 100°C = 90°C
TC = 25°C, 1ms
VGE= 15V, TJ = 125°C, RG = 5Ω
Clamped Inductive Load
TC = 25°C
Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10
Mounting Torque (TO-247)
TO-247 TO-286
Maximum Ratings
1200 1200
V V
±20 V ±30 V
50 A 28 A 10 A
150 A
ICM = 120 0.8 VCES
250
A W
-55 ... +150 150
-55 ... +150
°C °C °C
300 °C 260 °C
1.13/10
6 4
Nm/lb.in.
g g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE= 0V TJ = 125°C, Note1
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC = 28A, VGE = 15V, Note 2 TJ = 125°C
Ch...
