VCES Low VCE(sat) High speed IGBT IXGH/IXGM 25 N100 1000 V IXGH/IXGM 25 N100A 1000 V
I C25 50 A 50 A
VCE(sat) 3.5 V 4....
VCES Low VCE(sat) High speed IGBT IXGH/IXGM 25 N100 1000 V IXGH/IXGM 25 N100A 1000 V
I C25 50 A 50 A
VCE(sat) 3.5 V 4.0 V
Symbol
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Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient T C = 25°C T C = 90°C T C = 25°C, 1 ms V GE = 15 V, TVJ = 125° C, RG = 33 Ω Clamped inductive load, L = 100 µH T C = 25°C
Maximum Ratings 1000 1000 ±20 ±30 50 25 100 ICM = 50 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C
TO-247 AD (IXGH)
V CES V CGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg Md Weight
G
C
E
TO-204 AE (IXGM)
C G = Gate, E = Emitter, C = Collector, TAB = Collector
Mounting torque (M3)
1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 °C
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
Characteristic Values (TJ = 25° C, unless otherwise specified) min. typ. max. 1000 2.5 TJ = 25°C TJ = 125°C 5 250 1 ±100 25N100 25N100A 3.5 4.0 V V µA mA nA V V
Features International standard packages 2nd generation HDMOSTM process Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity
Voltage rating guaranteed at high temperature (125°C)
l l l l l l
BVCES VGE(th) I CES I GES VCE(sat)
IC IC
= 3 mA, VGE = 0 V = 250 µA, VCE = VGE
V CE = 0.8 VCES V GE = 0 V V CE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V
Applications AC motor speed control DC servo and robot drives DC chopper...
