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IXGH17N100U1

IXYS Corporation

Low VCE(sat) IGBT with Diode High speed IGBT with Diode

VCES Low VCE(sat) IGBT with Diode High speed IGBT with Diode IXGH 17 N100U1 IXGH 17 N100AU1 1000 V 1000 V IC25 34 A 34 ...


IXYS Corporation

IXGH17N100U1

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Description
VCES Low VCE(sat) IGBT with Diode High speed IGBT with Diode IXGH 17 N100U1 IXGH 17 N100AU1 1000 V 1000 V IC25 34 A 34 A VCE(sat) 3.5 V 4.0 V Combi Packs Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25° C to 150°C TJ = 25° C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25° C TC = 90° C TC = 25° C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 82 Ω Clamped inductive load, L = 100 µ H TC = 25° C Maximum Ratings 1000 1000 ±20 ±30 34 17 68 ICM = 34 @ 0.8 VCES 150 -55 ... +150 150 -55 ... +150 V V V V A A A A TO-247 AD G C E C = Collector, TAB = Collector G = Gate, E = Emitter, Features W °C °C °C l l l l Mounting torque (M3) 1.13/10 Nm/lb.in. 6 300 g °C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s l l International standard package JEDEC TO-247 AD IGBT and anti-parallel FRED in one package 2nd generation HDMOSTM process Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 2.5 TJ = 25° C TJ = 125°C 5.5 500 8 ±100 17N100U1 17N100AU1 3.5 4.0 V V µA mA nA V V l l l l BVCES VGE(th) ICES IGES VCE(sat) IC IC = 4.5 mA, VGE = 0 V = 500 µA, VCE = VGE l AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonan...




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