IGBT
Low VCE(sat) IGBT with Diode High Speed IGBT with Diode
Combi Pack
IXGH 12N100U1 IXGH 12N100AU1
VCES
I V C25
CE(sat)...
Description
Low VCE(sat) IGBT with Diode High Speed IGBT with Diode
Combi Pack
IXGH 12N100U1 IXGH 12N100AU1
VCES
I V C25
CE(sat)
1000 V 24 A 3.5 V 1000 V 24 A 4.0 V
Symbol
Test Conditions
VCES VCGR
VGES VGEM
I
C25
I
C90
ICM
SSOA (RBSOA)
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW
Continuous Transient
T C
= 25°C
T C
= 90°C
TC = 25°C, 1 ms
VGE = 15 V, TVJ = 125°C, RG = 150 W Clamped inductive load, L = 300 mH
PC
TC = 25°C
TJ TJM Tstg
Md Weight
Mounting torque with screw M3
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
1000
V
1000
V
±20
V
±30
V
24
A
12
A
48
A
ICM = 24
A
@ 0.8 VCES
100
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.13/10 Nm/lb.in.
6
g
300
°C
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values Min. Typ. Max.
BVCES VGE(th)
IC = 3 mA, VGE = 0 V BVCES temperature coefficient
IC = 500 mA, VGE = VGE VGE(th) temperature coefficient
1000 0.072
2.5 -0.192
V %/K
5.5 V %/K
ICES
VCE = 0.8, VCES
VGE= 0 V
TJ = 25°C TJ = 125°C
300 mA 5 mA
IGES
VCE = 0 V, VGE = ±20 V
±100 nA
VCE(sat)
IC = ICE90, VGE = 15
12N100U1 12N100AU1
3.5 V 4.0 V
TO-247AD
G CE
C (TAB)
G = Gate E = Emitter
C = Collector TAB = Collector
Features International standard packages
JEDEC TO-247 IGBT with antiparallel FRED in one
package HDMOSTM process Low VCE(sat)
- for minimum on-state conduction losses
MOS Gate turn-on - drive simplicity
Fast Recovery Ex...
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